linear & power amplifiers - smt 6 6 - 324 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC619LP5 / 619lp5e v07.0908 general description features functional diagram typical applications gaas phemt mmic power amplifier, dc - 10 ghz the HMC619LP5(e) is a gaas mmic phemt distributed power ampli er die which operates bet- ween dc and 10 ghz. the ampli er provides 11 db of gain, +37 dbm output ip3 and +27 dbm of output power at 1 db gain compression while requiring 300 ma from a +12v supply. gain atness is excellent at 0.5 db from dc - 10 ghz making the HMC619LP5(e) ideal for ew, ecm, radar and test equipment applications. the HMC619LP5(e) ampli er i/os are internally matched to 50 ohms. p1db output power: +27 dbm gain: 11 db output ip3: +37 dbm supply voltage: +12v @ 300 ma 50 ohm matched input/output 32 lead 5x5mm lead smt package: 25mm 2 the HMC619LP5(e) wideband pa is ideal for: ? telecom infrastructure ? microwave radio & vsat ? military & space ? test instrumentation ? fiber optics electrical speci cations, t a = +25 c, vdd= +12v, vgg2= +5v, idd= 300 ma* parameter min. typ. max. min. typ. max. min. typ. max. units frequency range dc - 2.0 2.0 - 8.0 8.0 - 10.0 ghz gain 10 12 9 11 8 10.5 db gain flatness 0.5 0.25 0.5 db gain variation over temperature 0.016 0.02 0.03 db/ c input return loss 11 12.5 17 db output return loss 16 16 12 db output power for 1 db compression (p1db) 28 25 27 23 25 dbm saturated output power (psat) 29 28 25.5 dbm output third order intercept (ip3) 41 37 32 dbm noise figure 5 5 7 db supply current (idd) (vdd= +12v, vgg1= -0.8v typ.) 300 300 300 ma * adjust vgg1 between -2 to 0v to achieve idd= 300 ma typical.
linear & power amplifiers - smt 6 6 - 325 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com output return loss vs. temperature gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature noise figure vs. temperature -30 -20 -10 0 10 20 024681012 s21 s11 s22 response (db) frequency (ghz) 0 3 6 9 12 15 18 024681012 +25c +85c -40c gain (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 024681012 +25c +85c -40c return loss (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 024681012 +25c +85c -40c isolation (db) frequency (ghz) -25 -20 -15 -10 -5 0 024681012 +25c +85c -40c return loss (db) frequency (ghz) HMC619LP5 / 619lp5e v07.0908 gaas phemt mmic power amplifier, dc - 10 ghz 0 3 6 9 12 15 024681012 +25c +85c -40c noise figure (db) frequency (ghz)
linear & power amplifiers - smt 6 6 - 326 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com p1db vs. temperature psat vs. temperature output ip3 vs. temperature output ip3 vs. output power @ 5ghz gain, power & output ip3 vs. supply voltage @ 10 ghz, fixed vgg 20 22 24 26 28 30 32 0246810 +25c +85c -40c p1db (dbm) frequency (ghz) HMC619LP5 / 619lp5e v07.0908 gaas phemt mmic power amplifier, dc - 10 ghz 20 22 24 26 28 30 32 0246810 +25c +85c -40c psat (dbm) frequency (ghz) 20 25 30 35 40 45 024681012 +25c +85c -40c ip3 (dbm) frequency (ghz) 10 15 20 25 30 35 40 11.5 12 12.5 gain p1db psat ip3 gain (db), p1db (dbm), psat (dbm), ip3 (dbm) vdd supply voltage (v) 30 35 40 45 50 0 2 4 6 8 10 12 14 16 18 20 22 24 26 11.5v 12.0v 12.5v ip3 (dbm) output power (dbm)
linear & power amplifiers - smt 6 6 - 327 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power compression @ 1 ghz power compression @ 10 ghz power compression @ 5 ghz power dissipation absolute maximum ratings drain bias voltage (vdd) 13 vdc gate bias voltage (vgg1) -2.5 to 0 vdc gate bias voltage (vgg2) +4v to +6v rf input power (rfin)(vdd = +12 vdc) 27 dbm channel temperature 150 c continuous pdiss (t= 85 c) (derate 65 mw/c above 85 c) 4.2 w thermal resistance (channel to package bottom) 15.3 c/w storage temperature -65 to 150 c operating temperature -40 to 85 c vdd (v) idd (ma) 11. 5 29 9 12.0 300 12.5 301 typical supply current vs. vdd electrostatic sensitive device observe handling precautions HMC619LP5 / 619lp5e v07.0908 gaas phemt mmic power amplifier, dc - 10 ghz 0 4 8 12 16 20 24 28 32 0 4 8 12 16 20 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 4 8 12 16 20 24 28 32 0 4 8 12 16 20 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 4 8 12 16 20 24 28 32 0 4 8 12 16 20 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 2 3 4 5 6 7 8 9 10 -10 -5 0 5 10 15 20 max pdis @ 85c 2 ghz 6 ghz power dissipation (w) input power (dbm)
linear & power amplifiers - smt 6 6 - 328 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters] 3. lead spacing tolerance is non-cumulative 4. pad burr length shall be 0.15mm maximum. pad burr height shall be 0.05mm maximum. 5. package warp shall not exceed 0.05mm. 6. all ground leads and ground paddle must be soldered to pcb rf ground. 7. refer to hittite application note for suggested land pattern. part number package body material lead finish msl rating package marking [3] HMC619LP5 low stress injection molded plastic sn/pb solder msl1 [1] h619 xxxx HMC619LP5e rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] h619 xxxx [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c [3] 4-digit lot number xxxx package information outline drawing HMC619LP5 / 619lp5e v07.0908 gaas phemt mmic power amplifier, dc - 10 ghz
linear & power amplifiers - smt 6 6 - 329 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pin number function description interface schematic 1, 3, 4, 6-12, 14, 17, 18, 19, 20, 22-28, 31, 32 n/c no connection. these pins may be connected to rf ground. performance will not be affected. 2 vgg2 gate control 2 for ampli er. +5v should be applied to vgg2 for nominal operation. 5 rfin this pad is dc coupled and matched to 50 ohms. 13 vgg1 gate control 1 for ampli er. 15 acg4 low frequency termination. attach bypass capacitor per application circuit herein. 16 acg3 21 rfout & vdd rf output for ampli er. connect the dc bias (vdd) network to provide drain current (idd). see application circuit herein. 29 acg2 low frequency termination. attach bypass capacitor per application circuit herein. 30 acg1 ground paddle gnd ground paddle must be connected to rf/dc ground. pin descriptions HMC619LP5 / 619lp5e v07.0908 gaas phemt mmic power amplifier, dc - 10 ghz
linear & power amplifiers - smt 6 6 - 330 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application circuit note 1: drain bias (vdd) must be applied through a broadband bias tee or external bias network. HMC619LP5 / 619lp5e v07.0908 gaas phemt mmic power amplifier, dc - 10 ghz
linear & power amplifiers - smt 6 6 - 331 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 108347 [1] HMC619LP5 / 619lp5e v07.0908 gaas phemt mmic power amplifier, dc - 10 ghz item description j1 - j2 sri k connector j3 - j4 2mm molex header c1, c2 100 pf capacitor, 0402 pkg. c3 - c6 1000 pf capacitor, 0603 pkg. c7 - c9 4.7 f capacitor, tantalum u1 HMC619LP5 / HMC619LP5e pcb [2] 109765 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350
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